Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands
- Authors: Shmagin V.B.1,2, Vdovichev S.N.1,2, Morozova E.E.1,2, Novikov A.V.1,2, Shaleev M.V.1,2, Shengurov D.V.1,2, Krasilnik Z.F.1,2
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Affiliations:
- Institute for Physics of Microstructures
- Lobachevsky State University of Nizhny Novgorod
- Issue: Vol 50, No 11 (2016)
- Pages: 1475-1478
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198362
- DOI: https://doi.org/10.1134/S1063782616110245
- ID: 198362
Cite item
Abstract
We report on the electroluminescence from silicon-based metal–insulator–semiconductor (MIS) diodes with arrays of self-assembled Ge(Si) nanoislands. Aluminum oxide (Al2O3) is used as an insulator material in the MIS contact. Variations in the electroluminescence spectra caused by changing the metal work function are examined. The intense electroluminescence from Ge(Si) nanoislands localized at a distance of 50 nm from the insulator–semiconductor interface is observed at room temperature. The emission spectrum is found to be controlled by choosing the design of the semiconductor structure and the barrier height for injected carriers.
About the authors
V. B. Shmagin
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: shm@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. N. Vdovichev
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: shm@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
E. E. Morozova
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: shm@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. V. Novikov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: shm@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
M. V. Shaleev
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: shm@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
D. V. Shengurov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: shm@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
Z. F. Krasilnik
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: shm@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950