Dynamic thermoelectric model of a light-emitting structure with a current spreading layer
- Authors: Sergeev V.A.1, Hodakov A.M.1
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Affiliations:
- Kotel’nikov Institute of Radio Engineering and Electronics (Ulyanovsk Branch)
- Issue: Vol 50, No 8 (2016)
- Pages: 1079-1084
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197677
- DOI: https://doi.org/10.1134/S1063782616080224
- ID: 197677
Cite item
Abstract
The non-stationary thermoelectric model of the axisymmetric heterostructure of a light-emitting device is considered taking into account positive feedback mechanisms and the effect of the current-spreading-layer resistance. Taking into account the current localization effect, the nonuniform distribution of the heterojunction current density over the heterostructure area is determined. The non-stationary thermal conductivity equation with temperature-dependent current density flowing into the heterojunction is solved by the numerical–analytical iterative method. Based on the developed model, the current density, temperature, and thermomechanical stress distributions for the heterojunction plane are determined.
About the authors
V. A. Sergeev
Kotel’nikov Institute of Radio Engineering and Electronics (Ulyanovsk Branch)
Author for correspondence.
Email: ufire@mv.ru
Russian Federation, ul. Goncharova 48, Ulyanovsk, 432071
A. M. Hodakov
Kotel’nikov Institute of Radio Engineering and Electronics (Ulyanovsk Branch)
Email: ufire@mv.ru
Russian Federation, ul. Goncharova 48, Ulyanovsk, 432071