Effects of local photoexcitation of high-concentration charge carriers in silicon
- Authors: Musaev A.M.1
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Affiliations:
- Institute of Physics, Dagestan Scientific Center
- Issue: Vol 51, No 10 (2017)
- Pages: 1290-1294
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/201313
- DOI: https://doi.org/10.1134/S1063782617100153
- ID: 201313
Cite item
Abstract
The phenomena occurring at the local pulsed photoexcitation of intrinsic nonequilibrium highconcentration charge carriers in silicon are experimentally investigated. The effect of a substantial increase in the lifetime of photoexcited charge carriers is found. It is shown that the effect of a substantial increase in the lifetime of charge carriers is caused by a change in the degree of degeneracy and displacement of the impurityrecombination level towards the Fermi level due to local thermoelastic deformation of the crystal and the corresponding distribution of the concentration of nonequilibrium charge carriers.
About the authors
A. M. Musaev
Institute of Physics, Dagestan Scientific Center
Author for correspondence.
Email: akhmed-musaev@yandex.ru
Russian Federation, Makhachkala, 367003