Email this article Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
- Authors: Aleshkin V.Y.1,2, Baidus N.V.1,2, Dubinov A.A.1,2, Kudryavtsev K.E.1,2, Nekorkin S.M.2, Novikov A.V.1,2, Rykov A.V.2, Samartsev I.V.2, Fefelov A.G.3, Yurasov D.V.1,2, Krasilnik Z.F.1,2
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Affiliations:
- Institute for Physics of Microstuctures
- Lobachevsky State University of Nizhny Novgorod
- OJSC RPE “Salut”
- Issue: Vol 51, No 11 (2017)
- Pages: 1477-1480
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201683
- DOI: https://doi.org/10.1134/S1063782617110057
- ID: 201683
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Abstract
InGaAs/GaAs/AlGaAs laser diodes with quantum wells are grown by the metal-organic chemical vapor deposition (MOCVD) method on an exact Si (001) substrate with a Ge buffer layer. The diodes generate stimulated emission in the pulsed mode at room temperature in the spectral range from 1.09 to 1.11 μm.
About the authors
V. Ya. Aleshkin
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: aleshkin@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
N. V. Baidus
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. A. Dubinov
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
K. E. Kudryavtsev
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. M. Nekorkin
Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
A. V. Novikov
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. V. Rykov
Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
I. V. Samartsev
Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
A. G. Fefelov
OJSC RPE “Salut”
Email: aleshkin@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
D. V. Yurasov
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
Z. F. Krasilnik
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
