Email this article Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates
- Authors: Kryzhanovskaya N.V.1,2,3, Polubavkina Y.S.1, Nevedomskiy V.N.3, Nikitina E.V.1, Lazarenko A.A.1, Egorov A.Y.4, Maximov M.V.1,2,3, Moiseev E.I.1, Zhukov A.E.1,2
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Affiliations:
- St. Petersburg National Research Academic University–Nanotechnology Research and Education Center
- Peter the Great St. Petersburg Polytechnical University
- Ioffe Physical–Technical Institute
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- Issue: Vol 51, No 2 (2017)
- Pages: 267-271
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/199521
- DOI: https://doi.org/10.1134/S1063782617020087
- ID: 199521
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Abstract
The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4° are studied. The possibility of producing GaP buffer layers that exhibit a high degree of heterointerface planarity and an outcropping dislocation density of no higher than ~2 × 108 cm–2 is shown. Emission from the Si/GaP/GaPN structure in the spectral range of 630–640 nm at room temperature is observed. Annealing during growth of the Si/GaP/GaPN structure makes it possible to enhance the room-temperature photoluminescence intensity by a factor of 2.6, with no shift of the maximum of the emission line.
About the authors
N. V. Kryzhanovskaya
St. Petersburg National Research Academic University–Nanotechnology Research and Education Center; Peter the Great St. Petersburg Polytechnical University; Ioffe Physical–Technical Institute
Author for correspondence.
Email: NataliaKryzh@gmail.com
Russian Federation, St. Petersburg, 195220; St. Petersburg, 195251; St. Petersburg, 194021
Yu. S. Polubavkina
St. Petersburg National Research Academic University–Nanotechnology Research and Education Center
Email: NataliaKryzh@gmail.com
Russian Federation, St. Petersburg, 195220
V. N. Nevedomskiy
Ioffe Physical–Technical Institute
Email: NataliaKryzh@gmail.com
Russian Federation, St. Petersburg, 194021
E. V. Nikitina
St. Petersburg National Research Academic University–Nanotechnology Research and Education Center
Email: NataliaKryzh@gmail.com
Russian Federation, St. Petersburg, 195220
A. A. Lazarenko
St. Petersburg National Research Academic University–Nanotechnology Research and Education Center
Email: NataliaKryzh@gmail.com
Russian Federation, St. Petersburg, 195220
A. Yu. Egorov
St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: NataliaKryzh@gmail.com
Russian Federation, St. Petersburg, 197101
M. V. Maximov
St. Petersburg National Research Academic University–Nanotechnology Research and Education Center; Peter the Great St. Petersburg Polytechnical University; Ioffe Physical–Technical Institute
Email: NataliaKryzh@gmail.com
Russian Federation, St. Petersburg, 195220; St. Petersburg, 195251; St. Petersburg, 194021
E. I. Moiseev
St. Petersburg National Research Academic University–Nanotechnology Research and Education Center
Email: NataliaKryzh@gmail.com
Russian Federation, St. Petersburg, 195220
A. E. Zhukov
St. Petersburg National Research Academic University–Nanotechnology Research and Education Center; Peter the Great St. Petersburg Polytechnical University
Email: NataliaKryzh@gmail.com
Russian Federation, St. Petersburg, 195220; St. Petersburg, 195251
