Composition and optical properties of amorphous a-SiOx:H films with silicon nanoclusters
- Authors: Terekhov V.A.1, Terukov E.I.2, Undalov Y.K.2, Parinova E.V.1, Spirin D.E.1, Seredin P.V.1, Minakov D.A.1, Domashevskaya E.P.1
- 
							Affiliations: 
							- Voronezh State University
- Ioffe Physical–Technical Institute
 
- Issue: Vol 50, No 2 (2016)
- Pages: 212-216
- Section: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/196781
- DOI: https://doi.org/10.1134/S1063782616020251
- ID: 196781
Cite item
Abstract
The phase composition and optical properties of hydrogenated amorphous films of silicon suboxide (a-SiOx:H) with silicon nanoclusters are studied. Ultrasoft X-ray emission spectroscopy show that silicon- suboxide films with various oxidation states and various amorphous silicon-cluster contents can be grown using dc discharge modulation. In films with an ncl-Si content of ∼50%, the optical-absorption edge is observed, whose extrapolation yields an optical band gap estimate of ∼3.2–3.3 eV. In the visible region, rather intense photoluminescence bands are observed, whose peak positions indicate the formation of silicon nanoclusters 2.5–4.7 nm in size in these films, depending on the film composition.
About the authors
V. A. Terekhov
Voronezh State University
							Author for correspondence.
							Email: ftt@phys.vsu.ru
				                					                																			                												                	Russian Federation, 							Universitetskaya pl. 1, Voronezh, 394006						
E. I. Terukov
Ioffe Physical–Technical Institute
														Email: ftt@phys.vsu.ru
				                					                																			                												                	Russian Federation, 							ul. Politekhnicheskaya 26, St. Petersburg, 194021						
Yu. K. Undalov
Ioffe Physical–Technical Institute
														Email: ftt@phys.vsu.ru
				                					                																			                												                	Russian Federation, 							ul. Politekhnicheskaya 26, St. Petersburg, 194021						
E. V. Parinova
Voronezh State University
														Email: ftt@phys.vsu.ru
				                					                																			                												                	Russian Federation, 							Universitetskaya pl. 1, Voronezh, 394006						
D. E. Spirin
Voronezh State University
														Email: ftt@phys.vsu.ru
				                					                																			                												                	Russian Federation, 							Universitetskaya pl. 1, Voronezh, 394006						
P. V. Seredin
Voronezh State University
														Email: ftt@phys.vsu.ru
				                					                																			                												                	Russian Federation, 							Universitetskaya pl. 1, Voronezh, 394006						
D. A. Minakov
Voronezh State University
														Email: ftt@phys.vsu.ru
				                					                																			                												                	Russian Federation, 							Universitetskaya pl. 1, Voronezh, 394006						
E. P. Domashevskaya
Voronezh State University
														Email: ftt@phys.vsu.ru
				                					                																			                												                	Russian Federation, 							Universitetskaya pl. 1, Voronezh, 394006						
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