High Temperature Quantum Kinetic Effects in Silicon Nanosandwiches
- Authors: Bagraev N.T.1,2, Klyachkin L.E.1, Khromov V.S.1, Malyarenko A.M.1, Mashkov V.A.2, Matveev T.V.2, Romanov V.V.2, Rul’ N.I.1,2, Taranets K.B.2
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Affiliations:
- Ioffe Institute
- Peter the Great St. Petersburg Polytechnic University
- Issue: Vol 52, No 4 (2018)
- Pages: 478-484
- Section: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Transport In Heterostructures
- URL: https://journals.rcsi.science/1063-7826/article/view/202823
- DOI: https://doi.org/10.1134/S1063782618040061
- ID: 202823
Cite item
Abstract
The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the high temperature de Haas-van Alphen, 300 K, quantum Hall, 77 K, effects as well as quantum conductance staircase in the silicon sandwich structure.
About the authors
N. T. Bagraev
Ioffe Institute; Peter the Great St. Petersburg Polytechnic University
Email: impurity.dipole@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251
L. E. Klyachkin
Ioffe Institute
Email: impurity.dipole@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. S. Khromov
Ioffe Institute
Email: impurity.dipole@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. M. Malyarenko
Ioffe Institute
Email: impurity.dipole@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. A. Mashkov
Peter the Great St. Petersburg Polytechnic University
Email: impurity.dipole@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
T. V. Matveev
Peter the Great St. Petersburg Polytechnic University
Email: impurity.dipole@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
V. V. Romanov
Peter the Great St. Petersburg Polytechnic University
Email: impurity.dipole@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
N. I. Rul’
Ioffe Institute; Peter the Great St. Petersburg Polytechnic University
Author for correspondence.
Email: impurity.dipole@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251
K. B. Taranets
Peter the Great St. Petersburg Polytechnic University
Email: impurity.dipole@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251