Email this article Thermoresistive Semiconductor SiC/Si Composite Material
- Authors: Brantov S.K.1, Yakimov E.B.2
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Affiliations:
- Institute of Solid-State Physics, Russian Academy of Sciences
- Institute of Microelectronics Technology, Russian Academy of Sciences
- Issue: Vol 53, No 2 (2019)
- Pages: 220-223
- Section: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/205727
- DOI: https://doi.org/10.1134/S1063782619020052
- ID: 205727
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Abstract
A new method for growing a layer of self-bonded silicon-carbide crystallites on the surface of a flexible carbon foil with subsequent impregnation of the formed structures by silicon melt is developed. Thermistors for a temperature range of 900–1450 K with s thermal sensitivity attaining 11 350 K able to be used in air are fabricated based on this composite material. The structural and electrophysical characteristics of the mentioned material are investigated.
About the authors
S. K. Brantov
Institute of Solid-State Physics, Russian Academy of Sciences
Author for correspondence.
Email: brantov@isssp.ac.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
E. B. Yakimov
Institute of Microelectronics Technology, Russian Academy of Sciences
Email: brantov@isssp.ac.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
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