Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission
- Authors: Rumyantsev V.V.1,2, Kadykov A.M.1, Fadeev M.A.1, Dubinov A.A.1,2, Utochkin V.V.1,2, Mikhailov N.N.3,4, Dvoretskii S.A.3, Morozov S.V.1,2, Gavrilenko V.I.1,2
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Affiliations:
- Institute for Physics of Microstructures
- Lobachevsky State University of Nizhny Novgorod
- Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Issue: Vol 51, No 12 (2017)
- Pages: 1557-1561
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201991
- DOI: https://doi.org/10.1134/S106378261712017X
- ID: 201991
Cite item
Abstract
The photoluminescence and stimulated emission during interband transitions in quantum wells based on HgCdTe placed in an insulator waveguide based on a wide-gap CdHgTe alloy are studied. Heterostructures with quantum wells based on HgCdTe are of interest for the development of long-wavelength lasers in the range of 25–60 μm, which is currently unattainable for quantum-cascade lasers. Optimal designs of quantum wells for attainment of long-wavelength stimulated emission under optical pumping are discussed. It is shown that narrow quantum wells from pure HgTe appear to be more promising for long-wavelength lasers in comparison with wide (potential) wells from the alloy due to the suppression of Auger recombination. It is demonstrated that molecular-beam epitaxy makes it possible to obtain structures for the localization of radiation with a wavelength of up to 25 μm at a high growth rate. Stimulated emission is obtained for wavelengths of 14–6 μm with a threshold pump intensity in the range of 100–500 W/cm2 at 20 K.
About the authors
V. V. Rumyantsev
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. M. Kadykov
Institute for Physics of Microstructures
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950
M. A. Fadeev
Institute for Physics of Microstructures
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950
A. A. Dubinov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
V. V. Utochkin
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
N. N. Mikhailov
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
S. A. Dvoretskii
Institute of Semiconductor Physics, Siberian Branch
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Novosibirsk, 630090
S. V. Morozov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
V. I. Gavrilenko
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950