J–V Characteristic of p–n Structure Formed on n-GaAs Surface by Ar+ Ion Beam
- 作者: Mikoushkin V.1, Kalinovskii V.1, Kontrosh E.1, Makarevskaya E.1
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隶属关系:
- Ioffe Institute
- 期: 卷 53, 编号 14 (2019)
- 页面: 1922-1925
- 栏目: Nanostructures Characterization
- URL: https://journals.rcsi.science/1063-7826/article/view/207521
- DOI: https://doi.org/10.1134/S1063782619140136
- ID: 207521
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详细
A highly defective ~10-nm-thick layer was fabricated in a high vacuum by 2.5 keV Ar+ ion bombardment of the n-GaAs surface. Valence band photoelectron spectra showed a p-type conductivity of the layer arising due to the high concentration of mechanically created point defects (p-centers). J–V characteristics measured ex situ for the structure consisting of the irradiated p-layer on the n-type substrate revealed a diode effect. Analysis of the data attributes the effect to the formation of a specific p–n junction. Thereby, we demonstrated that Ar+ ion bombardment of the n-GaAs surface results in that a nanostructure with the p–n junction properties is formed. The p–n junction under consideration seems to deserve further study and possible application since it can be formed in high-vacuum clean conditions directly by exposure to a low-energy Ar+ ion beam without wet lithography.
作者简介
V. Mikoushkin
Ioffe Institute
编辑信件的主要联系方式.
Email: V.Mikoushkin@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Kalinovskii
Ioffe Institute
编辑信件的主要联系方式.
Email: Vitak.Sopt@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
E. Kontrosh
Ioffe Institute
编辑信件的主要联系方式.
Email: Kontrosh@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
E. Makarevskaya
Ioffe Institute
编辑信件的主要联系方式.
Email: makareka@mail.ru
俄罗斯联邦, St. Petersburg, 194021