Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells


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Abstract

We report on the stimulated emission obtained in the wavelength range of 20.3–17.4 μm on the interband transitions at T = 8–50 K in HgCdTe quantum wells placed in a dielectric waveguide formed from wide-gap CdHgTe solid solution. Heterostructures with HgCdTe quantum wells are interesting for designing long-wavelength lasers operating in the wavelength range of 25–60 μm, which is not covered by currently available quantum cascade lasers. It is shown that the maximum temperature of stimulated emission is determined by the position of lateral maxima in the dispersion dependences in the first valence subband of the quantum well. Methods for suppressing nonradiative recombination in the structures with HgCdTe quantum wells are discussed.

About the authors

V. V. Rumyantsev

Institute for Physics of Microstructures, Russian Academy of Sciences; Nizhny Novgorod State University

Author for correspondence.
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

N. S. Kulikov

Institute for Physics of Microstructures, Russian Academy of Sciences; Nizhny Novgorod State University

Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

A. M. Kadykov

Institute for Physics of Microstructures, Russian Academy of Sciences

Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950

M. A. Fadeev

Institute for Physics of Microstructures, Russian Academy of Sciences

Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950

A. V. Ikonnikov

Moscow State University

Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Moscow, 119991

A. S. Kazakov

Moscow State University

Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Moscow, 119991

M. S. Zholudev

Institute for Physics of Microstructures, Russian Academy of Sciences

Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950

V. Ya. Aleshkin

Institute for Physics of Microstructures, Russian Academy of Sciences; Nizhny Novgorod State University

Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

V. V. Utochkin

Institute for Physics of Microstructures, Russian Academy of Sciences; Nizhny Novgorod State University

Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

N. N. Mikhailov

Institute for Semiconductor Physics, Russian Academy of Sciences, Siberian Branch; Novosibirsk State University

Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090

S. A. Dvoretskii

Institute for Semiconductor Physics, Russian Academy of Sciences, Siberian Branch

Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Novosibirsk, 630090

S. V. Morozov

Institute for Physics of Microstructures, Russian Academy of Sciences; Nizhny Novgorod State University

Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

V. I. Gavrilenko

Institute for Physics of Microstructures, Russian Academy of Sciences; Nizhny Novgorod State University

Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950


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