High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: I. Physics of the switching process
- Authors: Kyuregyan A.S.1
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Affiliations:
- Federal State Unitary Enterprise “All-Russian Electrotechnical Institute named after V.I. Lenin”
- Issue: Vol 51, No 9 (2017)
- Pages: 1208-1213
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/201199
- DOI: https://doi.org/10.1134/S1063782617090123
- ID: 201199
Cite item
Abstract
The switching of high-voltage silicon photodiodes, phototransistors, and photothyristors exposed to picosecond laser pulses quasi-homogeneous over illumination area is numerically simulated for the first time. An analysis of the results makes it possible to obtain “empirical” relations between the main switch parameters (energy of control pulses, light absorbance, and structure area) and the parameters characterizing the switching transition process in a circuit with resistive load. For some of these relations, approximate analytical formulas well describing the simulation results are derived. It is noted that the differences between switching processes in three types of structures appears only at long pulses at the final stage, when the blocking capability of photodiodes and phototransistors is recovered.
About the authors
A. S. Kyuregyan
Federal State Unitary Enterprise “All-Russian Electrotechnical Institute named after V.I. Lenin”
Author for correspondence.
Email: semlab@yandex.ru
Russian Federation, ul. Krasnokazarmennaya 12, Moscow, 111250