Email this article Critical Radius of Full Depletion in Semiconductor Nanowires Caused by Surface Charge Trapping
- Authors: Petrosyan S.G.1,2, Yesayan A.E.1, Nersesyan S.R.1, Khachatryan V.A.2
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Affiliations:
- Institute of Radiophysics and Electronics, NAS RA
- Russian-Armenian (Slavonic) University
- Issue: Vol 52, No 16 (2018)
- Pages: 2022-2025
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/205278
- DOI: https://doi.org/10.1134/S1063782618160236
- ID: 205278
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Abstract
We have presented a simple analytical model for estimating critical radius of full depletion in semiconductor nanowires due to charge carrier transport from volume to the surface states and radial band bending associated with screening of trapped surface charges. The model describes the critical radius functional dependences on doping level, surface states parameters and appears as a very useful tool to understand transport properties of nanowires limited particularly by surface states effects.
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About the authors
S. G. Petrosyan
Institute of Radiophysics and Electronics, NAS RA; Russian-Armenian (Slavonic) University
Email: suren.nersesyan@rambler.ru
Armenia, Ashtarak, 0203; Yerevan, 0051
A. E. Yesayan
Institute of Radiophysics and Electronics, NAS RA
Email: suren.nersesyan@rambler.ru
Armenia, Ashtarak, 0203
S. R. Nersesyan
Institute of Radiophysics and Electronics, NAS RA
Author for correspondence.
Email: suren.nersesyan@rambler.ru
Armenia, Ashtarak, 0203
V. A. Khachatryan
Russian-Armenian (Slavonic) University
Email: suren.nersesyan@rambler.ru
Armenia, Yerevan, 0051
