Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells
- Authors: Pavlov N.V.1, Zegrya G.G.1,2, Zegrya A.G.1, Bugrov V.E.2
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Affiliations:
- Ioffe Institute
- ITMO University
- Issue: Vol 52, No 2 (2018)
- Pages: 195-208
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/202416
- DOI: https://doi.org/10.1134/S1063782618020112
- ID: 202416
Cite item
Abstract
Microscopic analysis of intraband radiation absorption by holes with their transition to the spin-split band for InAsSb/AlSb and InGaAsP/InP semiconductor quantum wells is performed in the context of the four-band Kane model. The calculation is performed for two incident-radiation polarizations: along the crystal-growth axis and in the quantum-well plane. It is demonstrated that absorption with transition to the discrete spectrum of spin-split holes has a higher intensity than absorption with transitions to the continuous spectrum. The dependences of the intraband absorption coefficient on temperature, hole density, and quantum- well width are thoroughly analyzed. It is shown that intraband radiation absorption can be the main mechanism of internal radiation losses in lasers based on quantum wells.
About the authors
N. V. Pavlov
Ioffe Institute
Author for correspondence.
Email: pavlovnv@mail.ru
Russian Federation, St. Petersburg, 194021
G. G. Zegrya
Ioffe Institute; ITMO University
Email: pavlovnv@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101
A. G. Zegrya
Ioffe Institute
Email: pavlovnv@mail.ru
Russian Federation, St. Petersburg, 194021
V. E. Bugrov
ITMO University
Email: pavlovnv@mail.ru
Russian Federation, St. Petersburg, 197101