Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons

Abstract

The effect of low-temperature (up to 600°C) isothermal and isochronous annealing on the electrical characteristics of irradiated n-4H-SiC JBS Schottky diodes is studied. Irradiation is performed with 0.9-MeV electrons at a dose of 1 × 10¹⁶ cm^–2. It is shown that the forward current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the irradiated diodes are mainly restored at annealing temperatures of up to 300°C. As the annealing temperature is raised to 500°C, nearly 90% of the defects introduced by irradiation with fast electrons are annealed out. The possible recommended mode of stabilizing annealing to be used in radiation-defect engineering (RDE) is 500°C, 30 min.