Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates
- Authors: Nikolaev V.I.1,2,3, Pechnikov A.I.1,2, Stepanov S.I.2,4, Sharofidinov S.S.2,3, Golovatenko A.A.1,2,3, Nikitina I.P.3, Smirnov A.N.3, Bugrov V.E.2, Romanov A.E.2,3, Brunkov P.N.2,3, Kirilenko D.A.2,3
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Affiliations:
- Perfect Crystals LLC
- ITMO university
- Ioffe Physical–Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- Issue: Vol 50, No 7 (2016)
- Pages: 980-983
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197519
- DOI: https://doi.org/10.1134/S1063782616070186
- ID: 197519
Cite item
Abstract
The method of chloride epitaxy is employed to grow β-Ga2O3 epitaxial layers on a c-sapphire substrate. Purified dry air is used as the source of oxygen. The layers are studied using the methods of X-ray diffraction, optical microscopy, scanning electron microscopy, transmission electron microscopy, and micro-Raman spectroscopy. It is found that the growth plane of the layers is (\(\bar 2\)01), parallel to the substrate surface. The layers consist of separate large crystalline grains of three different in-plane orientations rotated relative to each other in the growth plane by 60°. Misorientation can be caused by the different symmetry of the substrate and the epitaxial layer.
About the authors
V. I. Nikolaev
Perfect Crystals LLC; ITMO university; Ioffe Physical–Technical Institute
Author for correspondence.
Email: vladimir.i.nikolaev@gmail.com
Russian Federation, St. Petersburg, 194064; St. Petersburg, 197101; St. Petersburg, 194021
A. I. Pechnikov
Perfect Crystals LLC; ITMO university
Email: vladimir.i.nikolaev@gmail.com
Russian Federation, St. Petersburg, 194064; St. Petersburg, 197101
S. I. Stepanov
ITMO university; Peter the Great St. Petersburg Polytechnic University
Email: vladimir.i.nikolaev@gmail.com
Russian Federation, St. Petersburg, 197101; St. Petersburg, 195251
Sh. Sh. Sharofidinov
ITMO university; Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
Russian Federation, St. Petersburg, 197101; St. Petersburg, 194021
A. A. Golovatenko
Perfect Crystals LLC; ITMO university; Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
Russian Federation, St. Petersburg, 194064; St. Petersburg, 197101; St. Petersburg, 194021
I. P. Nikitina
Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
Russian Federation, St. Petersburg, 194021
A. N. Smirnov
Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
Russian Federation, St. Petersburg, 194021
V. E. Bugrov
ITMO university
Email: vladimir.i.nikolaev@gmail.com
Russian Federation, St. Petersburg, 197101
A. E. Romanov
ITMO university; Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
Russian Federation, St. Petersburg, 197101; St. Petersburg, 194021
P. N. Brunkov
ITMO university; Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
Russian Federation, St. Petersburg, 197101; St. Petersburg, 194021
D. A. Kirilenko
ITMO university; Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
Russian Federation, St. Petersburg, 197101; St. Petersburg, 194021