Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes
- Authors: Zuev S.A.1, Kilessa G.V.1, Asanov E.E.1, Starostenko V.V.1, Pokrova S.V.1
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Affiliations:
- Vernadsky Crimean Federal University
- Issue: Vol 50, No 6 (2016)
- Pages: 810-814
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197279
- DOI: https://doi.org/10.1134/S1063782616060269
- ID: 197279
Cite item
Abstract
The dependences of the electrical characteristics of thin-film structures with Schottky barrier on gallium arsenide are studied using Monte Carlo numerical simulation in the kinetic approximation with the main scattering mechanisms taken into account. The dependences of the diode conductivity on the voltage and channel thickness are obtained. It is shown that the relation between the diode voltage and conductivity changes at a small channel thickness, which is explained by barrier field expulsion to the substrate.
About the authors
S. A. Zuev
Vernadsky Crimean Federal University
Author for correspondence.
Email: sazuev@yandex.ru
Russian Federation, ul. Vernadskogo 4, Simferopol, 295007
G. V. Kilessa
Vernadsky Crimean Federal University
Email: sazuev@yandex.ru
Russian Federation, ul. Vernadskogo 4, Simferopol, 295007
E. E. Asanov
Vernadsky Crimean Federal University
Email: sazuev@yandex.ru
Russian Federation, ul. Vernadskogo 4, Simferopol, 295007
V. V. Starostenko
Vernadsky Crimean Federal University
Email: sazuev@yandex.ru
Russian Federation, ul. Vernadskogo 4, Simferopol, 295007
S. V. Pokrova
Vernadsky Crimean Federal University
Email: sazuev@yandex.ru
Russian Federation, ul. Vernadskogo 4, Simferopol, 295007