Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon

D. I. Bilenko; O. Ya. Belobrovaya; D. V. Terin; V. V. Galushka; I. V. Galushka; E. A. Zharkova; V. P. Polyanskaya; V. I. Sidorov; I. T. Yagudin

doi:10.1134/S1063782618030077

Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon

Authors: Bilenko D.I.¹, Belobrovaya O.Y.¹, Terin D.V.¹, Galushka V.V.¹, Galushka I.V.¹, Zharkova E.A.¹, Polyanskaya V.P.¹, Sidorov V.I.¹, Yagudin I.T.¹
Affiliations:
1. Saratov State University
Issue: Vol 52, No 3 (2018)
Pages: 331-334
Section: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
URL: https://journals.rcsi.science/1063-7826/article/view/202589
DOI: https://doi.org/10.1134/S1063782618030077
ID: 202589

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Abstract

The possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of γ photons from a ²²⁶Ra radioisotope source and bremsstrahlung is demonstrated. The position of the longest photoluminescence wavelength tends to shift to the short-wavelength region of the spectrum. The emission efficiency increases upon irradiation of both the substrate and the layer formed.