On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation


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Abstract

The magnetoabsorption and interband photoconductivity spectra of HgTe/CdHgTe quantum wells exhibiting p-type conductivity are studied at different temperatures. It is shown that, for a sample with a normal band structure, the long-wavelength edge of the spectra shifts to higher energies with temperature increase, indicating an increase of the band gap in the quantum well. For a sample with an inverted band structure, it is for the first time found that the long-wavelength cut-off shifts to lower energies due to the topological phase transition from the inverted band structure to the normal structure with temperature increase. The experimental data are in agreement with the results of theoretical band-structure calculations based on the Kane model.

About the authors

A. V. Ikonnikov

Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod

Author for correspondence.
Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

L. S. Bovkun

Institute for Physics of Microstructures; Laboratoire National des Champs Magnetiques Intenses (LNCMI-G)

Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Grenoble, FR-38042

V. V. Rumyantsev

Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod

Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

S. S. Krishtopenko

Institute for Physics of Microstructures; Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM

Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Montpellier, 34095

V. Ya. Aleshkin

Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod

Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

A. M. Kadykov

Institute for Physics of Microstructures; Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM

Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Montpellier, 34095

M. Orlita

Laboratoire National des Champs Magnetiques Intenses (LNCMI-G)

Email: antikon@ipmras.ru
France, Grenoble, FR-38042

M. Potemski

Laboratoire National des Champs Magnetiques Intenses (LNCMI-G)

Email: antikon@ipmras.ru
France, Grenoble, FR-38042

V. I. Gavrilenko

Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod

Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

S. V. Morozov

Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod

Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

S. A. Dvoretsky

Institute of Semiconductor Physics, Siberian Branch

Email: antikon@ipmras.ru
Russian Federation, Novosibirsk, 630090

N. N. Mikhailov

Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: antikon@ipmras.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090

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