On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation
- Authors: Ikonnikov A.V.1,2, Bovkun L.S.1,3, Rumyantsev V.V.1,2, Krishtopenko S.S.1,4, Aleshkin V.Y.1,2, Kadykov A.M.1,4, Orlita M.3, Potemski M.3, Gavrilenko V.I.1,2, Morozov S.V.1,2, Dvoretsky S.A.5, Mikhailov N.N.5,6
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Affiliations:
- Institute for Physics of Microstructures
- Lobachevsky State University of Nizhny Novgorod
- Laboratoire National des Champs Magnetiques Intenses (LNCMI-G)
- Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM
- Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Issue: Vol 51, No 12 (2017)
- Pages: 1531-1536
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201959
- DOI: https://doi.org/10.1134/S1063782617120090
- ID: 201959
Cite item
Abstract
The magnetoabsorption and interband photoconductivity spectra of HgTe/CdHgTe quantum wells exhibiting p-type conductivity are studied at different temperatures. It is shown that, for a sample with a normal band structure, the long-wavelength edge of the spectra shifts to higher energies with temperature increase, indicating an increase of the band gap in the quantum well. For a sample with an inverted band structure, it is for the first time found that the long-wavelength cut-off shifts to lower energies due to the topological phase transition from the inverted band structure to the normal structure with temperature increase. The experimental data are in agreement with the results of theoretical band-structure calculations based on the Kane model.
About the authors
A. V. Ikonnikov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
L. S. Bovkun
Institute for Physics of Microstructures; Laboratoire National des Champs Magnetiques Intenses (LNCMI-G)
Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Grenoble, FR-38042
V. V. Rumyantsev
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. S. Krishtopenko
Institute for Physics of Microstructures; Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM
Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Montpellier, 34095
V. Ya. Aleshkin
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. M. Kadykov
Institute for Physics of Microstructures; Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM
Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Montpellier, 34095
M. Orlita
Laboratoire National des Champs Magnetiques Intenses (LNCMI-G)
Email: antikon@ipmras.ru
France, Grenoble, FR-38042
M. Potemski
Laboratoire National des Champs Magnetiques Intenses (LNCMI-G)
Email: antikon@ipmras.ru
France, Grenoble, FR-38042
V. I. Gavrilenko
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. V. Morozov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. A. Dvoretsky
Institute of Semiconductor Physics, Siberian Branch
Email: antikon@ipmras.ru
Russian Federation, Novosibirsk, 630090
N. N. Mikhailov
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: antikon@ipmras.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
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