Nanoparticle Formation in Zn+ and O+ Ion Sequentially Implanted SiO2 Film

Abstract

The ⁶⁴Zn⁺ and ¹⁶O⁺ ions were implanted in SiO₂ film on Si substrate with next parameters: the implant dose was 5.0 × 1016 cm^–2, for Zn⁺ ions the energy was 50 keV and for O⁺ ions the energy was 16 keV. Than the samples were subjected to isochronally during 1h annealing in N₂ atmosphere in temperature range 400–600°C and than in Ar atmosphere in temperature range from 700 up to 1000°C with a step of 100°C. After annealing the samples surface is structured and its roughness increases due to nanoparticle formation in subsurface layer. In as implanted and in annealed samples on its surface and in its body the Zn-contained nanoparticles with a size about 100 nm were formed. These nanoparticles consist presumably from Zn phase after implantation and from ZnO phase after annealing.