Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe
- Authors: Kozhukhov A.S.1,2, Sheglov D.V.1, Latyshev A.V.1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Issue: Vol 51, No 4 (2017)
- Pages: 420-422
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/199691
- DOI: https://doi.org/10.1134/S1063782617040091
- ID: 199691
Cite item
Abstract
A technique for reversible surface modification with an atomic-force-microscope (AFM) probe is suggested. In this method, no significant mechanical or topographic changes occur upon a local variation in the surface potential of a sample under the AFM probe. The method allows a controlled relative change in the ohmic resistance of a channel in a Hall bridge within the range 20–25%.
About the authors
A. S. Kozhukhov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Author for correspondence.
Email: antonkozhukhov@yandex.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
D. V. Sheglov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: antonkozhukhov@yandex.ru
Russian Federation, Novosibirsk, 630090
A. V. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: antonkozhukhov@yandex.ru
Russian Federation, Novosibirsk, 630090