Email this article Optimal Doping of Diode Current Interrupters
- Authors: Kyuregyan A.S.1
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Affiliations:
- All-Russia Electrical Engineering Institute
- Issue: Vol 52, No 3 (2018)
- Pages: 341-347
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/202603
- DOI: https://doi.org/10.1134/S1063782618030144
- ID: 202603
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Abstract
An analytical solution to the problem of a decrease in energy losses Ω in diode current interrupters is derived for the stage of recovery of the blocking ability due to optimization of the dopant distribution N(x) over the structure thickness. The distribution N(x) close to optimal is found; it makes it possible to decrease Ω by 30–55% compared with standard design interrupters with homogeneously doped high-resistivity layers.
About the authors
A. S. Kyuregyan
All-Russia Electrical Engineering Institute
Author for correspondence.
Email: ask@vei.ru
Russian Federation, Moscow, 111250
