Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account
- Authors: Obolenskaya E.S.1, Tarasova E.A.1, Churin A.Y.1, Obolensky S.V.1, Kozlov V.A.2
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Affiliations:
- Lobachevsky State University of Nizhny Novgorod (NNSU)
- Institute for Physics of Microstructures
- Issue: Vol 50, No 12 (2016)
- Pages: 1579-1583
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198780
- DOI: https://doi.org/10.1134/S1063782616120149
- ID: 198780
Cite item
Abstract
Microwave-signal generation in planar Gunn diodes with a two-dimensional electron gas, in which we previously studied steady-state electron transport, is theoretically studied. The applicability of a control electrode similar to a field-effect transistor gate to control the parameters of the output diode microwave signal is considered. The results of physical-topological modeling of semiconductor structures with different diode active-region structures, i.e., without a quantum well, with one and two quantum wells separated by a potential barrier, are compared. The calculated results are compared with our previous experimental data on recording Gunn generation in a Schottky-gate field-effect transistor. It is theoretically and experimentally shown that the power of the signal generated by the planar Gunn diode with a quantum well and a control electrode is sufficient to implement monolithic integrated circuits of different functionalities. It is theoretically and experimentally shown that the use of a control electrode on account of the introduction of corrective feedback allows a significant increase in the radiation resistance of a microwave generator with Schottky-gate field-effect transistors.
About the authors
E. S. Obolenskaya
Lobachevsky State University of Nizhny Novgorod (NNSU)
Author for correspondence.
Email: bess009@mail.ru
Russian Federation, Nizhny Novgorod, 603950
E. A. Tarasova
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: bess009@mail.ru
Russian Federation, Nizhny Novgorod, 603950
A. Yu. Churin
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: bess009@mail.ru
Russian Federation, Nizhny Novgorod, 603950
S. V. Obolensky
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: bess009@mail.ru
Russian Federation, Nizhny Novgorod, 603950
V. A. Kozlov
Institute for Physics of Microstructures
Email: bess009@mail.ru
Russian Federation, Nizhny Novgorod, 603087