Influence of the samarium impurity on the structure and surface morphology of Se95Te5 chalcogenide glassy semiconductor
- Authors: Mekhtiyeva S.I.1, Atayeva S.U.1, Isayev A.I.1, Zeynalov V.Z.1
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Affiliations:
- Abdullayev Institute of Physics
- Issue: Vol 51, No 6 (2017)
- Pages: 777-782
- Section: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/200075
- DOI: https://doi.org/10.1134/S1063782617060215
- ID: 200075
Cite item
Abstract
X-ray diffraction and atomic-force microscopy are used to study the structure and surface morphology of Se95Te5 chalcogenide glassy semiconductor films and the influence exerted on these films by doping with samarium. The parameters of the first sharp diffraction peak (FSDP), observed in X-ray diffraction patterns, are used to determine the numerical values of the local structure parameters, such as the “quasiperiod” of density fluctuations, correlation length [size of medium-range-order (MRO) regions], and nanovoid diameters. In addition, the numerical values of the roughness-amplitude parameters are determined. It is found that the disorder in the atomic structure and the irregularities on the surface of the films under study become more pronounced with increasing percentage content of the samarium impurity.
About the authors
S. I. Mekhtiyeva
Abdullayev Institute of Physics
Email: seva_atayeva@mail.ru
Azerbaijan, Baku, Az-1143
S. U. Atayeva
Abdullayev Institute of Physics
Author for correspondence.
Email: seva_atayeva@mail.ru
Azerbaijan, Baku, Az-1143
A. I. Isayev
Abdullayev Institute of Physics
Email: seva_atayeva@mail.ru
Azerbaijan, Baku, Az-1143
V. Z. Zeynalov
Abdullayev Institute of Physics
Email: seva_atayeva@mail.ru
Azerbaijan, Baku, Az-1143