Email this article Electrical Breakdown in Pure n- and p-Si
- Authors: Bannaya V.F.1, Nikitina E.V.2
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Affiliations:
- Moscow State University of Education
- Russian Peoples’ Friendship University
- Issue: Vol 52, No 3 (2018)
- Pages: 273-277
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/202516
- DOI: https://doi.org/10.1134/S1063782618030065
- ID: 202516
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Abstract
The results of calculations of the dependences of the kinetic coefficients of impact ionization and thermal recombination on an electric field in pure silicon are presented. By analogy with germanium, the dependences of the breakdown field Еbr on the material compensation ratio K are calculated. The validity of such calculation is justified in detail. The Еbr(K) curves are presented and compared with experimental data in the weak-compensation region. Matching with experimental results at which satisfactory agreement between theory and experiment is observed is performed.
About the authors
V. F. Bannaya
Moscow State University of Education
Email: enikitina@sci.edu.ru
Russian Federation, ul. Malaya Pirogovskaya 1/1, Moscow, 119991
E. V. Nikitina
Russian Peoples’ Friendship University
Author for correspondence.
Email: enikitina@sci.edu.ru
Russian Federation, ul. Miklukho-Maklaya 6, Moscow, 117198
