Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields

R. M. Balagula; M. Ya. Vinnichenko; I. S. Makhov; D. A. Firsov; L. E. Vorobjev

doi:10.1134/S106378261611004X

Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields

Authors: Balagula R.M.¹, Vinnichenko M.Y.¹, Makhov I.S.¹, Firsov D.A.¹, Vorobjev L.E.¹
Affiliations:
1. Peter the Great Saint-Petersburg Polytechnic University
Issue: Vol 50, No 11 (2016)
Pages: 1425-1430
Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
URL: https://journals.rcsi.science/1063-7826/article/view/198240
DOI: https://doi.org/10.1134/S106378261611004X
ID: 198240

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Statistics

Abstract

The effect of a lateral electric field on the mid-infrared absorption and interband photoluminescence spectra in double tunnel-coupled GaAs/AlGaAs quantum wells is studied. The results obtained are explained by the redistribution of hot electrons between quantum wells and changes in the space charge in the structure. The hot carrier temperature is determined by analyzing the intersubband light absorption and interband photoluminescence modulation spectra under strong lateral electric fields.