Email this article Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation
- Authors: Venediktov M.M.1, Dukov D.I.2, Krevskiy M.A.2, Metelkin I.O.3, Chukov G.V.3, Elesin V.V.3, Obolensky S.V.4, Bozhen’kina A.D.4, Tarasova E.A.4, Fefelov A.G.2
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Affiliations:
- Federal Research and Production Center “Y. Sedakov Research Institute of Measuring Systems”
- OAO Research-and-Production Enterprise “Salut”
- National Research Nuclear University “MEPhI”
- Lobachevsky State University of Nizhny Novgorod
- Issue: Vol 52, No 12 (2018)
- Pages: 1518-1524
- Section: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204648
- DOI: https://doi.org/10.1134/S1063782618120266
- ID: 204648
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Abstract
The influence of nonequilibrium processes in semiconductor structures under the effect of radiation on the characteristics of structures and microwave transistors based on them is analyzed. Special attention is paid to the comparison of pilot (experimental) and series-produced structures and transistors based on them before and after γ-neutron irradiation.
About the authors
M. M. Venediktov
Federal Research and Production Center “Y. Sedakov Research Institute of Measuring Systems”
Author for correspondence.
Email: thelen@yandex.ru
Russian Federation, Nizhny Novgorod, 603137
D. I. Dukov
OAO Research-and-Production Enterprise “Salut”
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603152
M. A. Krevskiy
OAO Research-and-Production Enterprise “Salut”
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603152
I. O. Metelkin
National Research Nuclear University “MEPhI”
Email: obolensk@rf.unn.ru
Russian Federation, Moscow, 114509
G. V. Chukov
National Research Nuclear University “MEPhI”
Email: obolensk@rf.unn.ru
Russian Federation, Moscow, 114509
V. V. Elesin
National Research Nuclear University “MEPhI”
Email: obolensk@rf.unn.ru
Russian Federation, Moscow, 114509
S. V. Obolensky
Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. D. Bozhen’kina
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
E. A. Tarasova
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. G. Fefelov
OAO Research-and-Production Enterprise “Salut”
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603152
