High-Sensitivity Photodetector Based on Atomically Thin MoS2
- Authors: Lavrov S.D.1, Shestakova A.P.1, Mishina E.D.1, Efimenkov Y.R.2, Sigov A.S.1
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Affiliations:
- Moscow Technological University (MIREA)
- NPP Pulsar
- Issue: Vol 52, No 6 (2018)
- Pages: 771-775
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/203526
- DOI: https://doi.org/10.1134/S106378261806012X
- ID: 203526
Cite item
Abstract
A design for a high-sensitivity photodetector with a single layer of MoS2 transition-metal dichalcogenide used as the basic functional element is proposed and the process of its fabrication is presented step by step. Quality evaluation and the selection of functional MoS2 flakes is based on the results of combined optical characterization. The main operating characteristics of the fabricated device are investigated and a photosensitivity of 1.4 mA/W is demonstrated. A difference of this device in comparison with existing analogues is its high photosensitivity at low operating voltages (in the range of ±3 V).
About the authors
S. D. Lavrov
Moscow Technological University (MIREA)
Author for correspondence.
Email: sdlavrov@mail.ru
Russian Federation, Moscow, 119454
A. P. Shestakova
Moscow Technological University (MIREA)
Email: sdlavrov@mail.ru
Russian Federation, Moscow, 119454
E. D. Mishina
Moscow Technological University (MIREA)
Email: sdlavrov@mail.ru
Russian Federation, Moscow, 119454
Yu. R. Efimenkov
NPP Pulsar
Email: sdlavrov@mail.ru
Russian Federation, Moscow, 105187
A. S. Sigov
Moscow Technological University (MIREA)
Email: sdlavrov@mail.ru
Russian Federation, Moscow, 119454