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Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates
Novikov A., Yurasov D., Baidakova N., Bushuykin P., Andreev B., Yunin P., Drozdov M., Yablonskiy A., Kalinnikov M., Krasilnik Z.
Specific features of doping with antimony during the ion-beam crystallization of silicon
Pashchenko A., Chebotarev S., Lunin L., Irkha V.
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers
Prokhorov D., Shengurov V., Denisov S., Filatov D., Zdoroveishev A., Chalkov V., Zaitsev A., Ved’ M., Dorokhin M., Baidakova N.
High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base
Levinshtein M., Mnatsakanov T., Yurkov S., Tandoev A., Ryu S., Palmour J.
On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates
Mizerov A., Timoshnev S., Nikitina E., Sobolev M., Shubin K., Berezovskaia T., Mokhov D., Lundin W., Nikolaev A., Bouravleuv A.
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation
Tarasova E., Khananova A., Obolensky S., Zemlyakov V., Sveshnikov Y., Egorkin V., Ivanov V., Medvedev G., Smotrin D.
In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique
Dorokhin M., Demina P., Erofeeva I., Zdoroveyshchev A., Kuznetsov Y., Boldin M., Popov A., Lantsev E., Boryakov A.
Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures
Egorkin V., Zemlyakov V., Nezhentsev A., Garmash V.
Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells
Chen X., Zhao B., Li S.
Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects
Kozlovski V., Lebedev A., Davydovskaya K., Lyubimova Y.
Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications
Chugh N., Kumar M., Bhattacharya M., Gupta R.
Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+n0n+ Diodes
Ivanov P., Samsonova T., Potapov A.
Edge Doping in Graphene Devices on SiO2 Substrates
Vasilyeva G., Smirnov D., Vasilyev Y., Greshnov A., Haug R.
Surface functionalization of single-layer and multilayer graphene upon ultraviolet irradiation
Levin D., Bobrinetskiy I., Emelianov A., Nevolin V., Romashkin A., Petuhov V.
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