Email this article Deep Radiation-Induced Defect Centers Created by a Fast Neutron Flux in CdZnTe Single Crystals
- Authors: Plyatsko S.V.1, Rashkovetskyi L.V.1
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Affiliations:
- Lashkarev Institute of Semiconductor Physics
- Issue: Vol 52, No 3 (2018)
- Pages: 305-309
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/202550
- DOI: https://doi.org/10.1134/S1063782618030181
- ID: 202550
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Abstract
The effect of a fast neutron flux (Φ = 1014–1015 cm–2) on the electrical and photoluminescence properties of p-CdZnTe single crystals is studied. Isothermal annealing is performed (T = 400–500 K), and the activation energy of the dissociation of radiation-induced defects is determined at ED ≈ 0.75 eV.
About the authors
S. V. Plyatsko
Lashkarev Institute of Semiconductor Physics
Author for correspondence.
Email: plyatsko@isp.kiev.ua
Ukraine, Kyiv, 03028
L. V. Rashkovetskyi
Lashkarev Institute of Semiconductor Physics
Email: plyatsko@isp.kiev.ua
Ukraine, Kyiv, 03028
