Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation
- Authors: Ponomarev D.S.1, Khabibullin R.A.1, Klochkov A.N.1, Yachmenev A.E.1, Bugaev A.S.1, Khusyainov D.I.2, Buriakov A.M.2, Bilyk V.P.2, Mishina E.D.2
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Affiliations:
- Institute of Ultrahigh-Frequency Semiconductor Electronics
- Moscow Technological University (MIREA)
- Issue: Vol 52, No 7 (2018)
- Pages: 864-869
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/203634
- DOI: https://doi.org/10.1134/S1063782618070175
- ID: 203634
Cite item
Abstract
The results of experimental studies of the time dynamics of photoexcited charge carriers in In0.53Ga0.47As/In0.52Al0.48As superlattices grown by molecular-beam epitaxy on a GaAs substrate with a metamorphic buffer are reported. On the basis of the results of the numerical simulation of band diagrams, the optimal thickness of the In0.52Al0.48As barrier layer (4 nm) is chosen. At this thickness, the electron wave functions in In0.53Ga0.47As substantially overlap the In0.52Al0.48As barriers. This makes it possible to attain a short lifetime of photoexcited charge carriers (τ ~ 3.4 ps) at the wavelength λ = 800 nm and the pumping power 50 mW without doping of the In0.53Ga0.47As layer with beryllium. It is shown that an increase in the wavelength to λ = 930 nm (at the same pumping power) yields a decrease in the lifetime of photoexcited charge carriers to τ ~ 2 ps. This effect is attributed to an increase in the capture cross section of trapping states for electrons with lower energies and to a decrease in the occupancy of traps at lower excitation densities.
About the authors
D. S. Ponomarev
Institute of Ultrahigh-Frequency Semiconductor Electronics
Author for correspondence.
Email: ponomarev_dmitr@mail.ru
Russian Federation, Moscow, 117105
R. A. Khabibullin
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Russian Federation, Moscow, 117105
A. N. Klochkov
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Russian Federation, Moscow, 117105
A. E. Yachmenev
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Russian Federation, Moscow, 117105
A. S. Bugaev
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Russian Federation, Moscow, 117105
D. I. Khusyainov
Moscow Technological University (MIREA)
Email: ponomarev_dmitr@mail.ru
Russian Federation, Moscow, 119454
A. M. Buriakov
Moscow Technological University (MIREA)
Email: ponomarev_dmitr@mail.ru
Russian Federation, Moscow, 119454
V. P. Bilyk
Moscow Technological University (MIREA)
Email: ponomarev_dmitr@mail.ru
Russian Federation, Moscow, 119454
E. D. Mishina
Moscow Technological University (MIREA)
Email: ponomarev_dmitr@mail.ru
Russian Federation, Moscow, 119454