Email this article Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?
- Authors: Titov A.I.1, Karabeshkin K.V.1, Karaseov P.A.1, Struchkov A.I.1
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Affiliations:
- Peter the Great St. Petersburg Polytechnic University
- Issue: Vol 53, No 11 (2019)
- Pages: 1415-1418
- Section: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/207255
- DOI: https://doi.org/10.1134/S1063782619110204
- ID: 207255
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Abstract
The accumulation of structural damage in GaN under irradiation with accelerated F and Ne ions with energies of 1.3 and 3.2 keV/amu is investigated. It is shown that chemical effects during implantation of fluorine ions within the doses under consideration do not noticeably affect the formation of stable structural damage both in the bulk and on the surface of GaN.
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About the authors
A. I. Titov
Peter the Great St. Petersburg Polytechnic University
Author for correspondence.
Email: andrei.titov@rphf.spbstu.ru
Russian Federation, St. Petersburg, 195251
K. V. Karabeshkin
Peter the Great St. Petersburg Polytechnic University
Email: andrei.titov@rphf.spbstu.ru
Russian Federation, St. Petersburg, 195251
P. A. Karaseov
Peter the Great St. Petersburg Polytechnic University
Email: andrei.titov@rphf.spbstu.ru
Russian Federation, St. Petersburg, 195251
A. I. Struchkov
Peter the Great St. Petersburg Polytechnic University
Email: andrei.titov@rphf.spbstu.ru
Russian Federation, St. Petersburg, 195251
