Analysis of the Features of Hot-Carrier Degradation in FinFETs
- Authors: Makarov A.A.1, Tyaginov S.E.1,2, Kaczer B.3, Jech M.1, Chasin A.3, Grill A.1, Hellings G.3, Vexler M.I.2, Linten D.3, Grasser T.1
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Affiliations:
- TU Vienna, Institute for Microelectronics
- Ioffe Institute
- IMEC
- Issue: Vol 52, No 10 (2018)
- Pages: 1298-1302
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204150
- DOI: https://doi.org/10.1134/S1063782618100081
- ID: 204150
Cite item
Abstract
For the first time, hot-carrier degradation (HCD) is simulated in non-planar field-effect transistors with a fin-shaped channel (FinFETs). For this purpose, a physical model considering single-carrier and multiple-carrier silicon–hydrogen bond breaking processes and their superpositions is used. To calculate the bond-dissociation rate, carrier energy distribution functions are used, which are determined by solving the Boltzmann transport equation. A HCD analysis shows that degradation is localized in the channel region adjacent to the transistor drain in the top channel-wall region. Good agreement between the experimental and calculated degradation characteristics is achieved with the same model parameters which were used for HCD reproduction in planar short-channel transistors and high-power semiconductor devices.
About the authors
A. A. Makarov
TU Vienna, Institute for Microelectronics
Email: vexler@mail.ioffe.ru
Austria, Vienna, 1040
S. E. Tyaginov
TU Vienna, Institute for Microelectronics; Ioffe Institute
Email: vexler@mail.ioffe.ru
Austria, Vienna, 1040; St. Petersburg, 194021
B. Kaczer
IMEC
Email: vexler@mail.ioffe.ru
Belgium, Kapeldreef 75, Leuven, 3001
M. Jech
TU Vienna, Institute for Microelectronics
Email: vexler@mail.ioffe.ru
Austria, Vienna, 1040
A. Chasin
IMEC
Email: vexler@mail.ioffe.ru
Belgium, Kapeldreef 75, Leuven, 3001
A. Grill
TU Vienna, Institute for Microelectronics
Email: vexler@mail.ioffe.ru
Austria, Vienna, 1040
G. Hellings
IMEC
Email: vexler@mail.ioffe.ru
Belgium, Kapeldreef 75, Leuven, 3001
M. I. Vexler
Ioffe Institute
Author for correspondence.
Email: vexler@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
D. Linten
IMEC
Email: vexler@mail.ioffe.ru
Belgium, Kapeldreef 75, Leuven, 3001
T. Grasser
TU Vienna, Institute for Microelectronics
Email: vexler@mail.ioffe.ru
Austria, Vienna, 1040