Method for increasing the carrier mobility in the channel of the 4 H -SiC MOSFET

A. I. Mikhaylov; A. V. Afanasyev; V. A. Ilyin; V. V. Luchinin; S. A. Reshanov; A. Schöner

doi:10.1134/S1063782616060178

Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET

Authors: Mikhaylov A.I.¹, Afanasyev A.V.¹, Ilyin V.A.¹, Luchinin V.V.¹, Reshanov S.A.², Schöner A.²
Affiliations:
1. St. Petersburg State Electrotechnical University LETI
2. Ascatron AB
Issue: Vol 50, No 6 (2016)
Pages: 824-827
Section: Physics of Semiconductor Devices
URL: https://journals.rcsi.science/1063-7826/article/view/197301
DOI: https://doi.org/10.1134/S1063782616060178
ID: 197301

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Abstract

A new method is suggested for increasing the carrier mobility in the channel of a field-effect transistor based on silicon carbide of the 4H polytype via the oxidation of a bilayer system constituted by a thin layer of silicon nitride and a silicon-dioxide layer. Together with increasing carrier mobility, the average breakdown field strength decreases as compared with the gate insulator thermally grown in an atmosphere of N₂O.