Effect of the Samarium Impurity on the Local Structure of Se95Te5 Chalcogenide Glassy Semiconductor and Current Passage through Al–Se95Te5〈Sm〉–Te Structures

Abstract

The effect of samarium doping on the local structure and morphological features of the surface of a Se₉₅Te₅ chalcogenide glassy semiconductor film is investigated by X-ray diffraction analysis and atomic force microscopy, and the effect of doping on the current flow through Al–Se₉₅Te₅〈Sm〉–Te structures is examined by measuring the I–V characteristics in the steady-state mode. The results obtained are interpreted using Lampert’s theory of injection currents, the Elliott void-cluster model, and the Mott and Street charged defects model proposed for chalcogenide glasses.