Injection-induced terahertz electroluminescence from silicon p–n structures
- Authors: Zakhar’in A.O.1, Vasilyev Y.B.1, Sobolev N.A.1, Zabrodskii V.V.1, Egorov S.V.2, Andrianov A.V.1
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Affiliations:
- Ioffe Institute
- St. Petersburg State Mining University
- Issue: Vol 51, No 5 (2017)
- Pages: 604-607
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/199865
- DOI: https://doi.org/10.1134/S1063782617050256
- ID: 199865
Cite item
Abstract
Injection-induced terahertz electroluminescence from silicon p+–n structures is observed at helium temperatures. Structures fabricated by the diffusion of boron into a phosphorus-doped n-Si substrate are studied. Relatively narrow luminescence lines are observed in the luminescence spectra against a broad smooth background. The spectral position of a number of emission lines corresponds to optical transitions between excited donor states and the ground state of phosphorus donors. The intracenter optical transitions of electrons at phosphorus donors are excited as a result of recombination processes occurring in the n-type region of the structure under the injection of nonequilibrium holes. A number of other lines in the terahertz emission spectra are associated with intracenter transitions at acceptor centers, which are also excited as a result of injection. The structureless background in the electroluminescence spectra may be due to terahertz emission upon the intraband energy relaxation of “hot” carriers having an effective temperature exceeding the lattice temperature. These “hot” carriers appear in the structure under injection conditions.
About the authors
A. O. Zakhar’in
Ioffe Institute
Email: alex.andrianov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. B. Vasilyev
Ioffe Institute
Email: alex.andrianov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. A. Sobolev
Ioffe Institute
Email: alex.andrianov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. V. Zabrodskii
Ioffe Institute
Email: alex.andrianov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. V. Egorov
St. Petersburg State Mining University
Email: alex.andrianov@mail.ioffe.ru
Russian Federation, St. Petersburg, 190006
A. V. Andrianov
Ioffe Institute
Author for correspondence.
Email: alex.andrianov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021