GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm)
- Authors: Khvostikov V.P.1, Sorokina S.V.1, Potapovich N.S.1, Levin R.V.1, Marichev A.E.1, Timoshina N.K.1, Pushnyi B.V.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 52, No 13 (2018)
- Pages: 1748-1753
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204922
- DOI: https://doi.org/10.1134/S1063782618130079
- ID: 204922
Cite item
Abstract
Photovoltaic laser-power converters with irradiation of the substrate side are developed based on lattice-matched GaInAs/InP heterostructures formed by metal-organic vapor-phase epitaxy. Variants of antireflection coatings with a reflection minimum at a wavelength of λ = 1064 nm as well as features of chip bonding using soldering pastes with different melting points are considered. The efficiency of 34.5% (1.2 W, λ =1064 nm) is achieved for the converters with the area of 3.5 × 3.5 mm2 at uniform radiation conditions.
About the authors
V. P. Khvostikov
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. V. Sorokina
Ioffe Institute
Author for correspondence.
Email: svsorokina@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. S. Potapovich
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021
R. V. Levin
Ioffe Institute
Author for correspondence.
Email: Lev@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. E. Marichev
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. Kh. Timoshina
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021
B. V. Pushnyi
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021