GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm)
- Авторы: Khvostikov V.P.1, Sorokina S.V.1, Potapovich N.S.1, Levin R.V.1, Marichev A.E.1, Timoshina N.K.1, Pushnyi B.V.1
-
Учреждения:
- Ioffe Institute
- Выпуск: Том 52, № 13 (2018)
- Страницы: 1748-1753
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204922
- DOI: https://doi.org/10.1134/S1063782618130079
- ID: 204922
Цитировать
Аннотация
Photovoltaic laser-power converters with irradiation of the substrate side are developed based on lattice-matched GaInAs/InP heterostructures formed by metal-organic vapor-phase epitaxy. Variants of antireflection coatings with a reflection minimum at a wavelength of λ = 1064 nm as well as features of chip bonding using soldering pastes with different melting points are considered. The efficiency of 34.5% (1.2 W, λ =1064 nm) is achieved for the converters with the area of 3.5 × 3.5 mm2 at uniform radiation conditions.
Об авторах
V. Khvostikov
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Россия, St. Petersburg, 194021
S. Sorokina
Ioffe Institute
Автор, ответственный за переписку.
Email: svsorokina@mail.ioffe.ru
Россия, St. Petersburg, 194021
N. Potapovich
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Россия, St. Petersburg, 194021
R. Levin
Ioffe Institute
Автор, ответственный за переписку.
Email: Lev@vpegroup.ioffe.ru
Россия, St. Petersburg, 194021
A. Marichev
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Россия, St. Petersburg, 194021
N. Timoshina
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Россия, St. Petersburg, 194021
B. Pushnyi
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
Россия, St. Petersburg, 194021
Дополнительные файлы
