Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality


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The time-resolved photoluminescence of quantum-confined InGaAs heterostructures grown on GaAs substrates is studied by time-correlated single photon counting. The heterostructures have different dimensionalities: the structures are formed as quantum dots, quantum wells, and structures of transition dimensionality (quantum well-dots). It is found that the room-temperature photoluminescence decay time of the samples substantially depends on their dimensionality and corresponds to 6, 7, and >20 ns for quantum dots, well-dots, and wells, respectively. It is thought that the presence of localization centers for charge carriers can be responsible for the experimentally observed shortening of the photoluminescence time in the heterostructures.

作者简介

A. Nadtochiy

St. Petersburg National Research Academic University, Russian Academy of Sciences

编辑信件的主要联系方式.
Email: al.nadtochy@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

S. Mintairov

Ioffe Institute

Email: al.nadtochy@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

N. Kalyuzhnyy

Ioffe Institute

Email: al.nadtochy@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

M. Maximov

St. Petersburg National Research Academic University, Russian Academy of Sciences

Email: al.nadtochy@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

D. Sannikov

Skolkovo Institute of Science and Technology; Lebedev Physical Institute, Russian Academy of Sciences

Email: al.nadtochy@mail.ioffe.ru
俄罗斯联邦, Moscow, 121205; Moscow, 119333

T. Yagafarov

Skolkovo Institute of Science and Technology

Email: al.nadtochy@mail.ioffe.ru
俄罗斯联邦, Moscow, 121205

A. Zhukov

St. Petersburg National Research Academic University, Russian Academy of Sciences

Email: al.nadtochy@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

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