Anomalous thermoelectric power in Hg3In2Te6 crystals
- 作者: Grushka O.G.1
-
隶属关系:
- Fed’kovich National University
- 期: 卷 50, 编号 6 (2016)
- 页面: 719-721
- 栏目: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197194
- DOI: https://doi.org/10.1134/S1063782616060075
- ID: 197194
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详细
Based on data on the Hall coefficient, it is shown that the existence of potential barriers in the region of impurity conductivity of highly compensated Hg3In2Te6 crystals is possible. The role of barriers in the anomalous behavior of transport phenomena is discussed qualitatively. Extremely large values of the thermoelectric power are related to the combination of thermoelectric powers of contact potentials for regions with different concentrations of electrons.
作者简介
O. Grushka
Fed’kovich National University
编辑信件的主要联系方式.
Email: legru@mail.ru
乌克兰, Chernivtsi, 58000
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