Email this article On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors
- Authors: Aleshkin V.Y.1, Gavrilenko L.V.1
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Affiliations:
- Institute for Physics of Microstructures
- Issue: Vol 51, No 11 (2017)
- Pages: 1444-1448
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201554
- DOI: https://doi.org/10.1134/S1063782617110069
- ID: 201554
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Abstract
The times of the cascade capture of electrons at a donor–acceptor charged dipole for the case of the pulsed and steady-state excitation of impurity photoconductivity in GaAs, Ge, and Si are calculated. It is shown that the dependence of the frequency of the cascade capture on the concentration of the charged impurity becomes sublinear in semiconductors under consideration at a concentration of the charged impurity higher than 1013 cm–3.
About the authors
V. Ya. Aleshkin
Institute for Physics of Microstructures
Author for correspondence.
Email: aleshkin@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
L. V. Gavrilenko
Institute for Physics of Microstructures
Email: aleshkin@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
