Email this article Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures
- Authors: Khanin Y.N.1, Vdovin E.E.1, Mishchenko A.2, Novoselov K.S.2
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Affiliations:
- Institute of Problems of Microelectronics Technology, Russian Academy of Sciences
- School of Physics and Astronomy, University of Manchester
- Issue: Vol 53, No 8 (2019)
- Pages: 1038-1041
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/206604
- DOI: https://doi.org/10.1134/S1063782619080104
- ID: 206604
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Abstract
Tunneling and magnetic tunneling are investigated in graphene/h-BN/graphene van der Waals heterosystems. Two new types of systems are found, in which negative differential conductivity regions are implemented due to resonant tunneling through defect levels in the h-BN barrier, and current caused by their presence is generated.
About the authors
Yu. N. Khanin
Institute of Problems of Microelectronics Technology, Russian Academy of Sciences
Email: vdov62@yandex.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
E. E. Vdovin
Institute of Problems of Microelectronics Technology, Russian Academy of Sciences
Author for correspondence.
Email: vdov62@yandex.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
A. Mishchenko
School of Physics and Astronomy, University of Manchester
Email: vdov62@yandex.ru
United Kingdom, Manchester, Oxford Road, M13 9PL
K. S. Novoselov
School of Physics and Astronomy, University of Manchester
Email: vdov62@yandex.ru
United Kingdom, Manchester, Oxford Road, M13 9PL
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