On the Properties of Isoparametric AlInGaAsP/InP Heterostructures

D. L. Alfimova; L. S. Lunin; M. L. Lunina; A. S. Pashchenko; E. M. Danilina

doi:10.1134/S1063782619070029

On the Properties of Isoparametric AlInGaAsP/InP Heterostructures

Authors: Alfimova D.L.¹, Lunin L.S.¹, Lunina M.L.¹, Pashchenko A.S.¹, Danilina E.M.¹
Affiliations:
1. Federal Research Center, Southern Scientific Center, Russian Academy of Sciences
Issue: Vol 53, No 7 (2019)
Pages: 887-891
Section: Surfaces, Interfaces, and Thin Films
URL: https://journals.rcsi.science/1063-7826/article/view/206457
DOI: https://doi.org/10.1134/S1063782619070029
ID: 206457

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Statistics

Abstract

The effect of growth conditions on the structural perfection of AlInGaAsP/InP thin-film heterostructures is discussed. The key parameters determining the structural perfection and surface quality of thin AlInGaAsP epitaxial films grown on indium-phosphide substrates from the liquid phase in a temperature-gradient field are determined.