Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

A. N. Yablonsky; S. V. Morozov; D. M. Gaponova; V. Ya. Aleshkin; V. G. Shengurov; B. N. Zvonkov; O. V. Vikhrova; N. V. Baidus’; Z. F. Krasil’nik

doi:10.1134/S1063782616110269

Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

Authors: Yablonsky A.N.¹^,2, Morozov S.V.¹^,2, Gaponova D.M.¹^,2, Aleshkin V.Y.¹^,2, Shengurov V.G.², Zvonkov B.N.², Vikhrova O.V.², Baidus’ N.V.², Krasil’nik Z.F.¹
Affiliations:
1. Institute for Physics of Microstructures
2. Lobachevsky State University of Nizhny Novgorod
Issue: Vol 50, No 11 (2016)
Pages: 1435-1438
Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
URL: https://journals.rcsi.science/1063-7826/article/view/198256
DOI: https://doi.org/10.1134/S1063782616110269
ID: 198256

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Abstract

We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 μm, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 μm. The results obtained are promising for integration of the structures into silicon-based optoelectronics.

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Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

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