Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface
- Authors: Koryazhkina M.N.1, Tikhov S.V.1, Gorshkov O.N.1, Kasatkin A.P.1, Antonov I.N.1
-
Affiliations:
- Lobachevsky State University of Nizhny Novgorod (NNSU)
- Issue: Vol 50, No 12 (2016)
- Pages: 1614-1618
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198841
- DOI: https://doi.org/10.1134/S1063782616120095
- ID: 198841
Cite item
Abstract
It is shown that the formation of Au nanoparticles at the insulator–silicon interface in structures with a high density of surface states results in a shift of the Fermi-level pinning energy at this interface towards the valence-band ceiling in silicon and in increasing the surface-state density at energies close to the Fermi level. In this case, a band with a peak at 0.85 eV arises on the photosensivity curves of the capacitor photovoltage, which is explained by the photoemission of electrons from the formed Au-nanoparticle electron states near the valence-band ceiling in silicon.
About the authors
M. N. Koryazhkina
Lobachevsky State University of Nizhny Novgorod (NNSU)
Author for correspondence.
Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950
S. V. Tikhov
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950
O. N. Gorshkov
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950
A. P. Kasatkin
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950
I. N. Antonov
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950