Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers
- Authors: Levinshtein M.E.1, Ivanov P.A.1, Zhang Q.J.2, Palmour J.W.2
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Affiliations:
- Ioffe Physical–Technical Institute
- Cree Inc., 4600 Silicon Dr.
- Issue: Vol 50, No 5 (2016)
- Pages: 656-661
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197119
- DOI: https://doi.org/10.1134/S1063782616050158
- ID: 197119
Cite item
Abstract
The forward-pulse isothermal current–voltage characteristics of 4H-SiC junction barrier Schottky rectifiers (JBSs) with a nominal blocking voltage of 1700 V are measured in the temperature range from–80 to +90°C (193–363 K) up to current densities j of ~5600 A/cm2 at–80°C and 3000 A/cm2 at +90°C. In these measurements, the overheating of the structures relative to the ambient temperature, ΔT, did not exceed several degrees. At higher current densities, the effective injection of minority carriers (holes) into the base of the structures is observed, which is accompanied by the appearance of an S-type differential resistance. The pulsed isothermal current–voltage characteristics are also measured at a temperature of 77 K.
About the authors
M. E. Levinshtein
Ioffe Physical–Technical Institute
Author for correspondence.
Email: melev@nimis.ioffe.ru
Russian Federation, St. Petersburg, 194021
P. A. Ivanov
Ioffe Physical–Technical Institute
Email: melev@nimis.ioffe.ru
Russian Federation, St. Petersburg, 194021
Q. J. Zhang
Cree Inc., 4600 Silicon Dr.
Email: melev@nimis.ioffe.ru
United States, Durham, NC, 27703
J. W. Palmour
Cree Inc., 4600 Silicon Dr.
Email: melev@nimis.ioffe.ru
United States, Durham, NC, 27703