Conduction in titanium dioxide films and metal–TiO2–Si structures
- Authors: Kalygina V.M.1, Egorova I.M.1, Prudaev I.A.1, Tolbanov O.P.1
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Affiliations:
- National Research Tomsk State University
- Issue: Vol 50, No 8 (2016)
- Pages: 1015-1019
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197569
- DOI: https://doi.org/10.1134/S1063782616080133
- ID: 197569
Cite item
Abstract
The effect of the annealing of titanium oxide films on the electrical properties of metal–TiO2–n-Si structures is investigated. It is shown that, regardless of the annealing temperature, the conductivity of the structures at positive gate potentials is determined by the space-charge-limited current in the insulator with traps exponentially distributed in terms of energy. At negative gate potentials, the main contribution to the current is provided by the generation of electron–hole pairs in the space-charge region in silicon. The properties of the TiO2/n-Si interface depend on the structure and phase state of the oxide film, which are determined by the annealing temperature.
About the authors
V. M. Kalygina
National Research Tomsk State University
Email: info@pleiadesonline.com
Russian Federation, Tomsk, 634050
I. M. Egorova
National Research Tomsk State University
Email: info@pleiadesonline.com
Russian Federation, Tomsk, 634050
I. A. Prudaev
National Research Tomsk State University
Email: info@pleiadesonline.com
Russian Federation, Tomsk, 634050
O. P. Tolbanov
National Research Tomsk State University
Email: info@pleiadesonline.com
Russian Federation, Tomsk, 634050