Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds
- Authors: Breev I.D.1, Anisimov A.N.1, Wolfson A.A.1, Kazarova O.P.1, Mokhov E.N.2
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Affiliations:
- Ioffe Institute
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
- Issue: Vol 53, No 11 (2019)
- Pages: 1558-1561
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/207337
- DOI: https://doi.org/10.1134/S1063782619110034
- ID: 207337
Cite item
Abstract
The Raman-scattering technique is used to analyze the structural quality of bulk AlN crystals grown by sublimation on SiC and AlN seeds. Growth on SiC seeds is conducted with retention of the SiC seed during growth (type 1) and with total evaporation of the SiC seed (type 2). Growth on AlN seeds is conducted in tungsten containers with no graphite parts (type 3). According to the analysis of Raman spectra, the highest quality is inherent in type-3 crystals that exhibit minimal full widths at half maximum of Raman lines. The experimentally observed specific features are defined by differences in the mechanism of growth and by the content of dopant impurities in the crystals grown.
Keywords
About the authors
I. D. Breev
Ioffe Institute
Email: Mokhov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. N. Anisimov
Ioffe Institute
Author for correspondence.
Email: aan0100@gmail.com
Russian Federation, St. Petersburg, 194021
A. A. Wolfson
Ioffe Institute
Email: Mokhov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
O. P. Kazarova
Ioffe Institute
Email: Mokhov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. N. Mokhov
St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
Author for correspondence.
Email: Mokhov@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101