InGaN/GaN light-emitting diode microwires of submillimeter length
- Authors: Lundin W.V.1, Rodin S.N.1, Sakharov A.V.1, Lundina E.Y.1, Usov S.O.2, Zadiranov Y.M.1, Troshkov S.I.1, Tsatsulnikov A.F.2,3
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Affiliations:
- Ioffe Physical–Technical Institute
- Research and Engineering Center of Submicron Heterostructures for Microelectronics
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- Issue: Vol 51, No 1 (2017)
- Pages: 100-103
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/199350
- DOI: https://doi.org/10.1134/S1063782617010122
- ID: 199350
Cite item
Abstract
Microcrystalline wire-like InGaN/GaN light-emitting diodes designed as core–shell structures 400–600 μm in length are grown by metal–organic vapor-phase epitaxy on sapphire and silicon substrates. The technology of the titanium-nanolayer-induced ultrafast growth of nanowire and microwire crystals is used. As a current is passed through the microcrystals, an electroluminescence signal is observed in the blue–green spectral region.
About the authors
W. V. Lundin
Ioffe Physical–Technical Institute
Author for correspondence.
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. N. Rodin
Ioffe Physical–Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. V. Sakharov
Ioffe Physical–Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. Yu. Lundina
Ioffe Physical–Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. O. Usov
Research and Engineering Center of Submicron Heterostructures for Microelectronics
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. M. Zadiranov
Ioffe Physical–Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. I. Troshkov
Ioffe Physical–Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. F. Tsatsulnikov
Research and Engineering Center of Submicron Heterostructures for Microelectronics; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101