Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon
- Authors: Okhapkin A.I.1, Korolyov S.A.1, Yunin P.A.1, Drozdov M.N.1, Kraev S.A.1, Khrykin O.I.1, Shashkin V.I.1
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Affiliations:
- Institute for Physics of Microstructures
- Issue: Vol 51, No 11 (2017)
- Pages: 1449-1452
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201570
- DOI: https://doi.org/10.1134/S1063782617110215
- ID: 201570
Cite item
Abstract
SiNx films on silicon are grown in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon. The dependences of the deposition rate and properties of silicon nitride on the plasmagas composition, pressure, radio-frequency power and inductive power are studied. In some cases, the found dependences differ from published data for undiluted reagents. It is found that the lowest impurity content in films and their best properties are implemented at a nitrogen-to-silane ratio close to 1.4. An increase in the radio-frequency power results in smoother samples due to the polishing effect of argon ions.
About the authors
A. I. Okhapkin
Institute for Physics of Microstructures
Author for correspondence.
Email: andy-ohapkin@yandex.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603087
S. A. Korolyov
Institute for Physics of Microstructures
Email: andy-ohapkin@yandex.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603087
P. A. Yunin
Institute for Physics of Microstructures
Email: andy-ohapkin@yandex.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603087
M. N. Drozdov
Institute for Physics of Microstructures
Email: andy-ohapkin@yandex.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603087
S. A. Kraev
Institute for Physics of Microstructures
Email: andy-ohapkin@yandex.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603087
O. I. Khrykin
Institute for Physics of Microstructures
Email: andy-ohapkin@yandex.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603087
V. I. Shashkin
Institute for Physics of Microstructures
Email: andy-ohapkin@yandex.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603087