Estimation of the Temperature of the Current Filament that Forms upon Switching in GeSbTe
- Authors: Fefelov S.A.1, Kazakova L.P.1,2, Bogoslovskiy N.A.1, Tsendin K.D.1
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Affiliations:
- Ioffe Institute
- St. Petersburg State Forest Technical University
- Issue: Vol 52, No 12 (2018)
- Pages: 1607-1610
- Section: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204805
- DOI: https://doi.org/10.1134/S1063782618120084
- ID: 204805
Cite item
Abstract
The current–voltage characteristics of thin-film samples of the GeSbTe system are measured in the current control mode. Voltage oscillations observed after switching are investigated. It is shown that these oscillations can be associated with the formation of a hot current filament and its gradual cooling. The size and temperatures of the current filament are estimated. It is shown that the characteristic temperature in the hot current filament corresponds to the temperature of the phase transition to the crystalline state.
About the authors
S. A. Fefelov
Ioffe Institute
Author for correspondence.
Email: s.fefelov@list.ru
Russian Federation, St. Petersburg, 194021
L. P. Kazakova
Ioffe Institute; St. Petersburg State Forest Technical University
Email: s.fefelov@list.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
N. A. Bogoslovskiy
Ioffe Institute
Email: s.fefelov@list.ru
Russian Federation, St. Petersburg, 194021
K. D. Tsendin
Ioffe Institute
Email: s.fefelov@list.ru
Russian Federation, St. Petersburg, 194021